27.17 Electrical tests

3GPP51.010-1Mobile Station (MS) conformance specificationPart 1: Conformance specificationTS

General test purpose

Testing of electrical characteristics of the SIM/ME interface.

Whilst non-conformance in this area would be unlikely to cause difficulties to other users or the network (type approval criteria), significant deviations from the specifications (3GPP TS 11.11 and ISO 7816) may damage the SIM. If an attempt is then made to use the SIM in a different ME, then its failure may reflect badly on both that ME and the network.

This subclause lists the electrical tests to be performed.

They include:

i) tests during activation and deactivation phases; and

ii) tests to be performed on each contact in both static and dynamic states: e.g. voltages, currents and signal characteristics.

However, due to the likely difficulty of accessing the terminals of the SIM/ME interface for the purposes of measurements, the ME manufacturer shall provide a test interface in accordance with subclause 36.5 for the purpose of conformance testing.

General measurement conventions

For the 5V interface operation mode, the measurement conventions are specified in ISO/IEC 7816‑3 subclause 4.2.1.

For the 3Vand 1,8V interface operation mode these conditions apply in an analogous way.

27.17.1 Test of the power transition phases

27.17.1.1 Phase preceding ME power on

27.17.1.1.1 Definition

When the mobile equipment is switched off, the contacts of the SIM/ME interface remain in an inactive state in order to prevent any damage to the SIM.

27.17.1.1.2 Conformance requirement

The residual voltage across the contacts of the SIM/ME interface (C1, C2, C3, C6, C7) shall not exceed ± 0,4 Volts referenced to GND.

Reference:

3GPP TS 11.11, subclause 4.3.3.

27.17.1.1.3 Test purpose

To verify that the residual voltage across the contacts of the SIM/ME interface (C1, C2, C3, C6, C7) is not greater than ± 0,4 Volts referenced to GND.

27.17.1.1.4 Method of test

27.17.1.1.4.1 Initial condition

The ME is connected to a SIM Simulator.

The contact C1 (Vcc) of the SIM/ME interface is loaded with an impedance of 10 kOhm.

The other contacts (C2, C3, C6, C7) are loaded with an impedance of 50 kOhm.

27.17.1.1.4.2 Procedure

The residual voltage on each contact is measured.

27.17.1.1.5 Test requirement

The residual voltage on each contact shall not exceed ±0,4 Volts referenced to GND.

27.17.1.2 Phase during SIM power on

27.17.1.2.1 Definition

When the mobile station is switched on or when the SIM/ME interface is being activated after 3V/5V or 1,8V/3V switching, the contacts shall be activated in a defined sequence in order to prevent any damage to the SIM.

The timing of this sequence is not defined, a measurement resolution better than or equivalent to 100 ns is assumed.

An ME supporting both 5V and 3V interface operation mode may switch from 3V to 5V after it has read the SIM type identification in the SIM status information by deactivating the SIM and activating it at the new supply voltage.

An ME supporting both 3V and 1,8V interface operation mode may switch from 1,8V to 3V after it has read the SIM type identification in the SIM status information by deactivating the SIM and activating it at the new supply voltage.

27.17.1.2.2 Conformance requirement

a) When the MS is soft powered on, the contacts of the SIM/ME interface shall be activated in the following order:

1. VCC at state H and stable;

2. CLK stable;

3. RST at state L for at least 400 clock cycles after the clock signal is applied to CLK;

4. I/O at state Z within 200 clock cycles after the clock signal is applied to CLK.

When Vpp is connected to Vcc, as allowed by 3GPP TS 11.11 (subclauses 4.3.2 and 5.3), then Vpp is activated together with Vcc, at the time of Vcc (step 1 in the sequence above).

b) When the MS is soft powered on, the contacts of the SIM/ME interface shall be activated in the following order:

1. VCC at state H and stable;

2. CLK stable;

3. RST at state L for at least 400 clock cycles after the clock signal is applied to CLK;

4. I/O at state Z within 200 clock cycles after the clock signal is applied to CLK.

c.1) When the MS is soft powered on, the contacts of the SIM/ME interface shall be activated to 3V mode in the following order:

1. VCC at state H and stable;

2. CLK stable;

3. RST at state L for at least 400 clock cycles after the clock signal is applied to CLK;

4. I/O at state Z within 200 clock cycles after the clock signal is applied to CLK.

c.2) When the SIM/ME interface is being activated after the 3V/5V switching the contacts shall be activated to 5V mode in the order given in c.1).

d) When the MS is soft powered on, the contacts of the SIM/ME interface shall be activated in the following order:

1. VCC at state H and stable;

2. CLK stable;

3. RST at state L for at least 400 clock cycles after the clock signal is applied to CLK;4. I/O at state Z within 200 clock cycles after the clock signal is applied to CLK.

e.1) When the MS is soft powered on, the contacts of the SIM/ME interface shall be activated to 1.81,8V mode in the following order:

1. VCC at state H and stable;

2. CLK stable;

3. RST at state L for at least 400 clock cycles after the clock signal is applied to CLK;4. I/O at state Z within 200 clock cycles after the clock signal is applied to CLK.

e.2) When the SIM/ME interface is being activated after the 1.81,8V/3V switching the contacts shall be activated to 3V mode in the order given in ce.1).

Reference:

a): 3GPP TS 11.11, subclause 4.3.2.

b), c.1), c.2): 3GPP TS 11.12, subclause 4.4 and subclause 4.5.

d), e.1), e.2): 3GPP TS 11.18, subclause 4.4 and subclause 4.5.

27.17.1.2.3 Test purpose

To verify that the contacts of the SIM/ME interface are activated in the correct order, as described in the conformance requirement.

27.17.1.2.4 Method of test

27.17.1.2.4.1 Initial condition

The ME is connected to a SIM Simulator.

27.17.1.2.4.2 Procedure

To test the requirements a), b), c.1), d) and e.1) the MS is soft powered on.

To test the requirement c.2) and e.2), the ME is caused to switch the voltage on the SIM/ME interface.

The verification of each activation procedure starts with the first contact leaving the inactive state. The SIM/ME interface is monitored until it is fully activated.

27.17.1.2.5 Test requirement

The contacts of the SIM/ME interface shall be activated in the correct order, as described in the conformance requirement.

27.17.1.3 Phase during ME power off with clock stop forbidden

27.17.1.3.1 Definition

When the mobile station is soft powered off, the contacts shall be deactivated in a defined sequence in order to prevent any damage to the SIM.

The timing of this sequence is not defined, a measurement resolution better than or equivalent to 100 ns is assumed.

NOTE 1: If during MS operation the SIM is physically removed it is impractical to ensure correct sequencing of deactivation and the possible damage to the SIM cannot be safeguarded by a type approval test. Furthermore, in this situation the integrity of SIM data is not guaranteed (see 3GPP TS 02.17).

NOTE 2: Since 3V technology SIMs and 1,8V technology SIMs shall not indicate that clock stop is forbidden, this test applies only to MEs with a 5V interface and MEs with a 3V/5V interface when powered down from 5V mode.

27.17.1.3.2 Conformance requirement

a) When the ME is soft powered down, the contacts of the SIM/ME interface shall be deactivated in the following order:

1. RST at low state;

2. Clock stopped at low state;

3. Vpp inactive (only if Vpp is provided independent of Vcc, see 3GPP TS 11.11 subclause 5.3);

4. I/O at state A;

5. Vcc inactive.

b) When Vpp is connected to Vcc, as allowed by 3GPP TS 11.11 (subclause 5.3), then Vpp is deactivated together with Vcc, at the time of Vcc (step 5 in the sequence above).

c) When the ME is soft powered down from 5V mode, the contacts of the SIM/ME interface shall be deactivated in the following order:

1. RST at low state;

2. Clock stopped at low state;

3. I/O at status A;

4. Vcc inactive.

Reference:

a) 3GPP TS 11.11, subclause 4.3.2.

c) 3GPP TS 11.12, subclause 4.5.

27.17.1.3.3 Test purpose

To verify that the contacts of the SIM/ME interface become deactivated in the correct order, as given in the conformance requirement.

27.17.1.3.4 Method of test

27.17.1.3.4.1 Initial condition

The ME is connected to a SIM Simulator.

The file characteristics of the directories (byte 14 of STATUS information) shall indicate a 5V SIM with clock stop forbidden.

27.17.1.3.4.2 Procedure

The MS is soft powered off.

The SIM/ME interface is monitored until it is fully deactivated.

27.17.1.3.5 Test requirement

The contacts of the SIM/ME interface shall be deactivated in the correct order, as given in the conformance requirement.

27.17.1.4 Phase during ME power off with clock stop allowed

27.17.1.4.1 Definition

When the mobile station is soft powered off or when the SIM/ME interface is being deactivated for 3V/5V or 1,8V/3V switching, the contacts shall be deactivated in a defined sequence in order to prevent any damage to the SIM.

The timing of this sequence is not defined, a measurement resolution better than or equivalent to 100 ns is assumed.

NOTE: If during MS operation the SIM is physically removed it is impractical to ensure correct sequencing of deactivation and the possible damage to the SIM cannot be safeguarded by a type approval test. Furthermore, in this situation the integrity of the SIM data is not guaranteed (see 3GPP TS 02.17).

27.17.1.4.2 Conformance requirement

a) Depending on the state of the clock at the time of deactivation, the contacts of the SIM/ME shall be deactivated in one of two ways.

If the clock is running, the contacts of the SIM/ME interface shall be deactivated in the following order:

1. RST at low level;

2. Clock stopped at low level;

3. Vpp inactive (only if Vpp is provided independent of Vcc, see 3GPP TS 11.11 subclause 5.3);

4. I/O at status A;

5. Vcc inactive.

When Vpp is connected to Vcc, as allowed by 3GPP TS 11.11 (subclause 5.3), then Vpp is deactivated together with Vcc, at the time of Vcc (step 5 in the sequence above).

If the clock is stopped and is not restarted, the ME is allowed to deactivate all the contacts in any order, provided that all signals reach low level before Vcc leaves high level.

b) Depending on the state of the clock at the time of deactivation, the contacts of the SIM/ME shall be deactivated in one of two ways.

If the clock is running, the contacts of the SIM/ME interface shall be deactivated in the following order:

1. RST at low level;

2. Clock stopped at low level;

3. I/O at status A;

4. Vcc inactive.

If the clock is stopped and is not restarted, the ME is allowed to deactivate all the contacts in any order, provided that all signals reach low level before Vcc leaves high level.

c.1) Depending on the state of the clock at the time of deactivation, the contacts of the SIM/ME interface shall be deactivated in one of two ways.

If the clock is running, the contacts of the SIM/ME interface shall be deactivated in the following order:

1. RST at low level;

2. Clock stopped at low level;

3. I/O at status A;

4. Vcc inactive.

If the clock is stopped and is not restarted, the ME is allowed to deactivate all the contacts in any order, provided that all signals reach low level before Vcc leaves high level.

c.2) When the SIM/ME interface is deactivated for 3V/5V switching, the contacts shall be deactivated as given in c.1).

d) Depending on the state of the clock at the time of deactivation, the contacts of the SIM/ME shall be deactivated in one of two ways.

If the clock is running, the contacts of the SIM/ME interface shall be deactivated in the following order:

1. RST at low level;

2. Clock stopped at low level;

3. I/O at status A;

4. Vcc inactive.

If the clock is stopped and is not restarted, the ME is allowed to deactivate all the contacts in any order, provided that all signals reach low level before Vcc leaves high level.

e.1) Depending on the state of the clock at the time of deactivation, the contacts of the SIM/ME interface shall be deactivated in one of two ways.

If the clock is running, the contacts of the SIM/ME interface shall be deactivated in the following order:

1. RST at low level;

2. Clock stopped at low level;

3. I/O at status A;

4. Vcc inactive.

If the clock is stopped and is not restarted, the ME is allowed to deactivate all the contacts in any order, provided that all signals reach low level before Vcc leaves high level.

e.2) When the SIM/ME interface is deactivated for 1,8V/3V switching, the contacts shall be deactivated as given in e.1).

Reference:

a): 3GPP TS 11.11, subclause 4.3.2.

b), c.1), c.2): 3GPP TS 11.12, subclause 4.5.

d), e.1), e.2): 3GPP TS 11.18, subclause 4.5.

27.17.1.4.3 Test purpose

To verify that, depending on the state of the clock (running or stopped), the contacts of the SIM/ME interface become deactivated in the correct order, as given in the conformance requirement.

27.17.1.4.4 Method of test

27.17.1.4.4.1 Initial condition

The ME is connected to a SIM Simulator.

The file characteristics of the directories (byte 14 of STATUS information) shall indicate that clock stop is allowed.

27.17.1.4.4.2 Procedure

To test the requirements a), b), c.1), d) and e.1), the MS is soft powered off.

To test the requirement c.2) and e.2), the ME is caused to switch the voltage on the SIM/ME interface.

The SIM/ME interface is monitored until it is fully deactivated.

27.17.1.4.5 Test requirement

The contacts of the SIM/ME interface shall be deactivated in the correct order, as given in the conformance requirements.

27.17.1.5 SIM Type Recognition and Voltage Switching

27.17.1.5.1 Reaction of 3V only MEs on SIM type recognition failure

27.17.1.5.1.1 Definition

When a 3V only ME detects a failure during the SIM type recognition procedure, the ME shall reject the SIM in order to prevent any damage to the SIM.

27.17.1.5.1.2 Conformance requirement

1) The procedure for deriving the identification bit (SIM type recognition procedure) shall be performed by the ME immediately after the ATR and before issuing any other command. The procedure shall consist of the two commands "SELECT GSM" and "STATUS/GET RESPONSE".

2) If a 3V only ME cannot complete the SIM type recognition procedure the ME shall deactivate the SIM/ME interface and reject the SIM immediately without issuing any further command.

This procedure shall be finished within 5 s after the "STATUS/GET RESPONSE" command.

Reference:

3GPP TS 11.12 subclauses 4.3 and 4.5.

27.17.1.5.1.3 Test purpose

1) To verify that a 3V only ME correctly performs the SIM type recognition procedure.

2) To verify that a 3V only ME deactivates the SIM/ME interface and rejects the SIM in case that the SIM does not respond to the "STATUS/GET RESPONSE" command.

27.17.1.5.1.4 Method of test

27.17.1.5.1.4.1 Initial condition

The ME is connected to a SIM Simulator simulating a 3V technology SIM with nominal test conditions according to table 27.2‑2. All elementary files are coded as default.

The ME is powered on.

27.17.1.5.1.4.2 Procedure

After sending the ATR the SIM simulator checks the presence of the commands "SELECT GSM" and "STATUS/GET RESPONSE" as the first and only commands of the GSM card session.

The SIM simulator does not respond to the "STATUS/GET RESPONSE" command.

The SIM/ME interface is monitored for at least 1 minute until the MS is switched off.

27.17.1.5.1.5 Test requirement

1) Immediately after the ATR only the two commands "SELECT GSM" and "STATUS/GET RESPONSE" shall be sent by the ME.

2) The 3V only ME shall deactivate the SIM/ME interface within 5 s and reject the SIM (i.e. not activate the SIM/ME interface within the test procedure).

27.17.1.5.2 Reaction of 3V only MEs on type recognition of 5V only SIMs

27.17.1.5.2.1 Definition

When a 3V only ME detects a 5V only SIM during the SIM type recognition procedure, the ME shall reject the SIM in order to prevent any damage to the SIM.

27.17.1.5.2.2 Conformance requirement

1) The procedure for deriving the identification bit (SIM type recognition procedure) shall be performed by the ME immediately after the ATR and before issuing any other command. The procedure shall consist of the two commands "SELECT GSM" and "STATUS/GET RESPONSE"

2) If a 3V only ME identifies a 5V only SIM during the SIM type recognition procedure the ME shall deactivate the SIM/ME interface and reject the SIM immediately without issuing any further command.

Reference:

3GPP TS 11.12 subclauses 4.3 and 4.5.

27.17.1.5.2.3 Test purpose

1) To verify that a 3V only ME correctly performs the SIM type recognition procedure.

2) To verify that a 3V only ME deactivates the SIM/ME interface and rejects the SIM if a 5V only SIM is applied.

27.17.1.5.2.4 Method of test

27.17.1.5.2.4.1 Initial condition

The ME is connected to a SIM Simulator simulating a 3V technology SIM (to ensure that the ME can perform the SIM type recognition procedure) with nominal test conditions according to table 27.2‑2. All elementary files are coded as default. Bit 5 in byte 14 of the status information is set to "0" (i.e. 5V only SIM).

The ME is powered on.

27.17.1.5.2.4.2 Procedure

After sending the ATR the SIM simulator checks the presence of the commands "SELECT GSM" and "STATUS/GET RESPONSE" as the first and only commands of the GSM card session.

The SIM simulator responds to the "STATUS/GET RESPONSE" command with a status information indicating a 5V only SIM.

The SIM/ME interface is monitored for at least 1 minute until the MS is switched off.

27.17.1.5.2.5 Test requirement

1) Immediately after the ATR only the two command "SELECT GSM" and "STATUS/GET RESPONSE" shall be sent by the ME.

2) The 3V only ME shall deactivate the SIM/ME interface immediately after receipt of the status information from the SIM (but not later than 5 s after the "STATUS/GET RESPONSE command) and reject the SIM (i.e. not activate the SIM/ME interface again within the test procedure).

27.17.1.5.3 Reaction of 3V technology MEs on type recognition of 5V only SIMs

27.17.1.5.3.1 Definition

When a 3V technology ME detects a 5V only SIM during the SIM type recognition procedure, the ME shall switch to 5V operation.

27.17.1.5.3.2 Conformance requirement

1) A 3V technology ME shall initially activate the SIM at 3V (i.e. the first activation of a GSM card session.

2) The procedure for deriving the identification bit (SIM type recognition procedure) shall be performed by the ME immediately after the ATR procedure and before issuing any other command. The procedure shall consist of the two commands "SELECT GSM" and "STATUS/GET RESPONSE".

3) If a 3V technology ME identifies a 5V only SIM during the SIM type recognition procedure, the ME shall switch to 5V operation mode. Switching from 3V to 5V shall only be performed by deactivating the SIM and activating it with 5V supply voltage immediately after the SIM type recognition procedure without issuing any further command.

Reference:

3GPP TS 11.12 subclauses 4.3 and 4.4.

27.17.1.5.3.3 Test purpose

1) To verify that a 3V technology ME initially activates the SIM with 3V.

2) To verify that a 3V technology ME correctly performs the SIM type recognition procedure.

3) To verify that a 3V technology ME deactivates the SIM/ME interface immediately after the SIM type recognition procedure (in order to switch the supply voltage) without issuing any further command.

27.17.1.5.3.4 Method of test

27.17.1.5.3.4.1 Initial condition

The ME is connected to a SIM Simulator simulating a 5V only SIM with nominal test conditions according to table 27.2‑1. All elementary files are coded as default. Bit 5 in byte 14 of the status information is set to "0" (i.e. 5V only SIM).

The ME is powered on.

27.17.1.5.3.4.2 Procedure

After sending the ATR the SIM simulator checks the presence of the commands "SELECT GSM" and "STATUS/GET RESPONSE" as the first and only commands of the GSM card session.

The SIM simulator responds to the "STATUS/GET RESPONSE" command with a status information indicating a 5V only SIM.

The SIM/ME interface is monitored for at least 1 minute until the MS is switched off.

27.17.1.5.3.5 Test requirement

1) The initial activation of the SIM/ME interface shall be performed with 3V supply voltage.

2) Immediately after the ATR the two commands "SELECT GSM" and "STATUS/GET RESPONSE" shall be sent by the ME before issuing further commands.

3) The 3V technology ME shall deactivate the SIM/ME interface immediately after receipt of the status information from the SIM.

27.17.1.5.4 Reaction of 3V technology MEs on type recognition of 3V technology SIMs

27.17.1.5.4.1 Definition

When a 3V technology ME detects a 3V technology SIM during the SIM type recognition procedure the ME may either switch to 5V operation or stay in 3V operation.

27.17.1.5.4.2 Conformance requirement

1) A 3V technology ME shall initially activate the SIM with a 3V (i.e. the first activation of a GSM card session).

2) The procedure for deriving the identification bit (SIM type recognition procedure) shall be performed by the ME immediately after the ATR and before issuing any other command. the procedure shall consist of the two commands "SELECT GSM" and "STATUS/GET RESPONSE".

3) If a 3V technology ME identifies a 3V technology SIM during the SIM type recognition the ME may switch to 5V operation. Switching from 3V to 5V shall only be performed by deactivating the SIM and activating it with 5V supply voltage immediately after the SIM type recognition procedure without issuing any further commands.

Reference:

3GPP TS 11.12, subclauses 4.3, 4.4 and 4.7.

27.17.1.5.4.3 Test purpose

1) To verify that a 3V technology ME initially activates the SIM with 3V.

2) To verify that a 3V technology ME correctly performs the SIM type recognition procedure.

3) To verify that a 3V technology ME deactivates the SIM/ME interface immediately after the recognition of a 3V technology SIM (in order to switch the supply voltage) or proceeds with the 3V operation during the whole GSM card session without switching to 5V supply voltage.

27.17.1.5.4.4 Method of test

27.17.1.5.4.4.1 Initial condition

The ME is connected to a SIM Simulator simulating a 3V technology SIM with nominal test conditions according to table 27.2‑2. All elementary files are coded as default. Bit 5 in byte 14 of the status information is set to "1" (i.e. 3V technology SIM.)

The ME is powered on.

27.17.1.5.4.4.2 Procedure

After sending the ATR the SIM simulator checks the presence of commands "SELECT GSM" and "STATUS/GET RESPONSE" as the first and only commands of the GSM card session.

The SIM simulator responds to the "STATUS/GET RESPONSE" command with a status information indicating a 3V technology SIM.

The SIM/ME interface is monitored for at least 1 minute until the MS is switched off.

27.27.1.5.4.5 Test requirement

1) The initial activation of the SIM/ME interface shall be performed with 3V supply voltage.

2) Immediately after the ATR the two commands "SELECT GSM" and "STATUS/GET RESPONSE: shall be sent by the ME.

3) The ME shall react in one of the following ways:

a) The ME deactivates the SIM/ME interface immediately after the receipt of the status information from the SIM.

b) the ME proceeds with the GSM card session without switching to another supply voltage.

27.17.1.5.5 Reaction of 1,8V only MEs on SIM type recognition failure

27.17.1.5.5.1 Definition

When a 1,8V only ME detects a failure during the SIM type recognition procedure, the ME shall reject the SIM in order to prevent any damage to the SIM.

27.17.1.5.5.2 Conformance requirement

1) The procedure for deriving the identification bit (SIM type recognition procedure) shall be performed by the ME immediately after the ATR and before issuing any other command. The procedure shall consist of the two commands "SELECT GSM" and "STATUS/GET RESPONSE".

2) If a 1,8V only ME cannot complete the SIM type recognition procedure the ME shall deactivate the SIM/ME interface and reject the SIM immediately without issuing any further command.

This procedure shall be finished within 5 s after the "STATUS/GET RESPONSE" command.

Reference:

3GPP TS 11.18 subclauses 4.3 and 4.5.

27.17.1.5.5.3 Test purpose

1) To verify that a 1,8V only ME correctly performs the SIM type recognition procedure.

2) To verify that a 1,8V only ME deactivates the SIM/ME interface and rejects the SIM in case that the SIM does not respond to the "STATUS/GET RESPONSE" command.

27.17.1.5.5.4 Method of test

27.17.1.5.5.4.1 Initial condition

The ME is connected to a SIM Simulator simulating a 1,8V technology SIM with nominal test conditions according to table 27.2‑3. All elementary files are coded as default.

The ME is powered on.

27.17.1.5.5.4.2 Procedure

After sending the ATR the SIM simulator checks the presence of the commands "SELECT GSM" and "STATUS/GET RESPONSE" as the first and only commands of the GSM card session.

The SIM simulator does not respond to the "STATUS/GET RESPONSE" command.

The SIM/ME interface is monitored for at least 1 minute until the MS is switched off.

27.17.1.5.5.5 Test requirement

1) Immediately after the ATR only the two commands "SELECT GSM" and "STATUS/GET RESPONSE" shall be sent by the ME.

2) The 1,8V only ME shall deactivate the SIM/ME interface within 5 s and reject the SIM (i.e. not activate the SIM/ME interface within the test procedure).

27.17.1.5.6 Reaction of 1,8V only MEs on type recognition of 3V SIMs

27.17.1.5.6.1 Definition

When a 1,8V only ME detects a 3V technology SIM during the SIM type recognition procedure, the ME shall reject the SIM in order to prevent any damage to the SIM.

.

27.17.1.5.6.2 Conformance requirement

1) The procedure for deriving the identification bit (SIM type recognition procedure) shall be performed by the ME immediately after the ATR and before issuing any other command. The procedure shall consist of the two commands "SELECT GSM" and "STATUS/GET RESPONSE"

2) If a 1,8V only ME identifies a 3V technology SIM during the SIM type recognition procedure the ME shall deactivate the SIM/ME interface and reject the SIM immediately without issuing any further command.

Reference:

3GPP TS 11.18 subclauses 4.3 and 4.5.

27.17.1.5.6.3 Test purpose

1) To verify that a 1,8V only ME correctly performs the SIM type recognition procedure.

2) To verify that a 1,8V only ME deactivates the SIM/ME interface and rejects the SIM if a 3V technology SIM is applied.

27.17.1.5.6.4 Method of test

27.17.1.5.6.4.1 Initial condition

The ME is connected to a SIM Simulator simulating a 1,8V technology SIM (to ensure that the ME can perform the SIM type recognition procedure) with nominal test conditions according to table 27.2‑3. All elementary files are coded as default. Bits 6 and 5 in byte 14 of the status information are set to "01" (i.e. 3V technology SIM).

The ME is powered on.

27.17.1.5.6.4.2 Procedure

After sending the ATR the SIM simulator checks the presence of the commands "SELECT GSM" and "STATUS/GET RESPONSE" as the first and only commands of the GSM card session.

The SIM simulator responds to the "STATUS/GET RESPONSE" command with a status information indicating a 3V technology SIM.

The SIM/ME interface is monitored for at least 1 minute until the MS is switched off.

27.17.1.5.6.5 Test requirement

1) Immediately after the ATR only the two command "SELECT GSM" and "STATUS/GET RESPONSE" shall be sent by the ME.

2) The 1,8V only ME shall deactivate the SIM/ME interface immediately after receipt of the status information from the SIM (but not later than 5 s after the "STATUS/GET RESPONSE command) and reject the SIM (i.e. not activate the SIM/ME interface again within the test procedure).

27.17.1.5.7 Reaction of 1,8V technology MEs on type recognition of 3V technology SIMs

27.17.1.5.7.1 Definition

When a 1,8V technology ME detects a 3V technology SIM during the SIM type recognition procedure, the ME shall switch to 3V operation.

27.17.1.5.7.2 Conformance requirement

1) A 1,8V technology ME shall initially activate the SIM at 1,8V (i.e. the first activation of a GSM card session.

2) The procedure for deriving the identification bit (SIM type recognition procedure) shall be performed by the ME immediately after the ATR procedure and before issuing any other command. The procedure shall consist of the two commands "SELECT GSM" and "STATUS/GET RESPONSE".

3) If a 1,8V technology ME identifies a 3V technology SIM during the SIM type recognition procedure, the ME shall switch to 3V operation mode. Switching from 1,8V to 3V shall only be performed by deactivating the SIM and activating it with 3V supply voltage immediately after the SIM type recognition procedure without issuing any further command.

Reference:

3GPP TS 11.18 subclauses 4.3 and 4.4.

27.17.1.5.7.3 Test purpose

1) To verify that a 1,8V technology ME initially activates the SIM with 1,8V.

2) To verify that a 1,8V technology ME correctly performs the SIM type recognition procedure.

3) To verify that a 1,8V technology ME deactivates the SIM/ME interface immediately after the SIM type recognition procedure (in order to switch the supply voltage) without issuing any further command.

27.17.1.5.7.4 Method of test

27.17.1.5.7.4.1 Initial condition

The ME is connected to a SIM Simulator simulating a 3V technology SIM with nominal test conditions according to table 27.2‑2. All elementary files are coded as default. Bits 6 and 5 in byte 14 of the status information are set to "01" (i.e. 3V technology SIM).

The ME is powered on.

27.17.1.5.7.4.2 Procedure

After sending the ATR the SIM simulator checks the presence of the commands "SELECT GSM" and "STATUS/GET RESPONSE" as the first and only commands of the GSM card session.

The SIM simulator responds to the "STATUS/GET RESPONSE" command with a status information indicating a 3V technology SIM.

The SIM/ME interface is monitored for at least 1 minute until the MS is switched off.

27.17.1.5.7.5 Test requirement

1) The initial activation of the SIM/ME interface shall be performed with 1,8V supply voltage.

2) Immediately after the ATR the two commands "SELECT GSM" and "STATUS/GET RESPONSE" shall be sent by the ME before issuing further commands.

3) The 1,8V technology ME shall deactivate the SIM/ME interface immediately after receipt of the status information from the SIM.

27.17.1.5.8 Reaction of 1,8V technology MEs on type recognition of 1,8V technology SIMs

27.17.1.5.8.1 Definition

When a 1,8V technology ME detects a 1,8V technology SIM during the SIM type recognition procedure the ME may either switch to 3V operation or stay in 1,8V operation.

27.17.1.5.8.2 Conformance requirement

1) A 1,8V technology ME shall initially activate the SIM with a 1,8V (i.e. the first activation of a GSM card session).

2) The procedure for deriving the identification bit (SIM type recognition procedure) shall be performed by the ME immediately after the ATR and before issuing any other command. the procedure shall consist of the two commands "SELECT GSM" and "STATUS/GET RESPONSE".

3) If a 1,8V technology ME identifies a 1,8V technology SIM during the SIM type recognition the ME may switch to 3V operation. Switching from 1,8V to 3V shall only be performed by deactivating the SIM and activating it with 3V supply voltage immediately after the SIM type recognition procedure without issuing any further commands.

Reference:

3GPP TS 11.18, subclauses 4.3, 4.4 and 4.7.

27.17.1.5.8.3 Test purpose

1) To verify that a 1,8V technology ME initially activates the SIM with 1,8V.

2) To verify that a 1,8V technology ME correctly performs the SIM type recognition procedure.

3) To verify that a 1,8V technology ME deactivates the SIM/ME interface immediately after the recognition of a 1,8V technology SIM (in order to switch the supply voltage) or proceeds with the 1,8V operation during the whole GSM card session without switching to 3V supply voltage.

27.17.1.5.8.4 Method of test

27.17.1.5.8.4.1 Initial condition

The ME is connected to a SIM Simulator simulating a 1,8V technology SIM with nominal test conditions according to table 27.2‑3. All elementary files are coded as default. Bits 6 and 5 in byte 14 of the status information are set to "11" (i.e. 1,8V technology SIM.)

The ME is powered on.

27.17.1.5.8.4.2 Procedure

After sending the ATR the SIM simulator checks the presence of commands "SELECT GSM" and "STATUS/GET RESPONSE" as the first and only commands of the GSM card session.

The SIM simulator responds to the "STATUS/GET RESPONSE" command with a status information indicating a 1,8V technology SIM.

The SIM/ME interface is monitored for at least 1 minute until the MS is switched off.

27.17.1.5.8.5 Test requirement

1) The initial activation of the SIM/ME interface shall be performed with 1,8V supply voltage.

2) Immediately after the ATR the two commands "SELECT GSM" and "STATUS/GET RESPONSE: shall be sent by the ME.

3) The ME shall react in one of the following ways:

a) The ME deactivates the SIM/ME interface immediately after the receipt of the status information from the SIM.

b) the ME proceeds with the GSM card session without switching to another supply voltage.

27.17.2 Electrical tests on each ME contact

The following tables give the electrical conditions that must be applied by the SIM simulator to all contacts during a test if not stated otherwise.

Table 27.2-1: Nominal test conditions on 5V SIM/ME interface

Contacts

Low level

High level

Max. capacitive load

C1 (Vcc)

I = 10 mA

C2 (RST)

I = ‑200 A

I = +20 A

30 pF

C3 (CLK)

I = ‑200 A

I = +20 A

30 pF

C5 (GND)

C6 ((Vpp)

I = 0 mA

C7 (I/O)

ME input

ME output

V = 0 V

I = ‑1 mA

I = +20 A

I = +20 A

30 pF

Table 27.2-2: Nominal test conditions on 3V SIM/ME interface

Contacts

Low level

High level

Max. capacitive load

C1 (Vcc)

I = 6 mA

C2 (RST)

I = ‑200 A

I = +200 A

30 pF

C3 (CLK)

I = ‑20 A

I = +20 A

30 pF

C5 (GND)

C6 ((Vpp)

C7 (I/O)

ME input

ME output

V = 0 V

I = ‑1 mA

I = +20 A

I = +20 A

30 pF

Table 27.2-3: Nominal test conditions on 1,8V SIM/ME interface

Contacts

Low level

High level

Max. capacitive load

C1 (Vcc)

I = 4 mA

C2 (RST)

I = ‑200 A

I = +200 A

30 pF

C3 (CLK)

I = ‑20 A

I = +20 A

30 pF

C5 (GND)

C6 ((Vpp)

C7 (I/O)

ME input

ME output

V = 0 V

I = ‑1 mA

I = +20 A

I = +20 A

30 pF

NOTE 1: Measurements of contacts voltage levels can be done at any time since the beginning of activation of the SIM and the end of deactivation of the SIM (ISO/IEC 7816‑3 subclause 5.1).

NOTE 2: The reference point of all measurements is the contact C5 (Ground).

NOTE 3: Currents flowing into the SIM are considered positive.

27.17.2.1 Electrical tests on contact C1

C1 = Card power supply (Vcc).

27.17.2.1.1 Test 1

27.17.2.1.1.1 Definition

When the mobile station is activated, the supply voltage on the SIM/ME interface shall remain in the specified range in order to ensure correct operation and to prevent any damage to the SIM.

27.17.2.1.1.2 Conformance requirement

a) The voltage on contact C1 of the SIM/ME interface shall be 5V ± 10 % for Icc up to 10 mA.

b) The voltage on contact C1 of the SIM/ME interface shall be 3V ± 10 % for Icc up to 6 mA.

c.1) The voltage on contact C1 of the SIM/ME interface shall be 5V ± 10 % for Icc up to 10 mA when the interface is in 5V operation mode.

c.2) The voltage on contact C1 of the SIM/ME interface shall be 3V ± 10 % for Icc up to 6 mA when the interface is in 3V operation mode.

d) The voltage on contact C1 of the SIM/ME interface shall be 1,8V ± 10 % for Icc up to 4 mA.

e.1) The voltage on contact C1 of the SIM/ME interface shall be 3V ± 10 % for Icc up to 6 mA when the interface is in 3V operation mode.

e.2) The voltage on contact C1 of the SIM/ME interface shall be 1,8V ± 10 % for Icc up to 4 mA when the interface is in 1,8V operation mode.

Reference:

a), c.1): 3GPP TS 11.11, subclause 5.1.

b), c.2), e.1): 3GPP TS 11.12, clause 5.

d), e.2): 3GPP TS 11.18, clause 5.

27.17.2.1.1.3 Test purpose

To verify that the ME keeps the voltage on contact C1 of the SIM/ME interface within the ranges specified in the conformance requirements.

27.17.2.1.1.4 Method of test

Initial condition

The ME is connected to a SIM Simulator.

The MS is activated.

The remaining contacts of the SIM/ME interface are in nominal test conditions (see 3GPP TS 11.10 subclause 27.17.2).

Test Procedure

The voltage of contact C1 (Vcc) of the SIM/ME interface is measured.

27.17.2.1.1.5 Test requirement

The voltage on contact C1 of the SIM/ME interface shall be within the ranges specified in the conformance requirements.

27.17.2.1.2 Test 2

27.17.2.1.2.1 Definition

When the mobile station is activated, the supply voltage on the SIM/ME interface shall be able to counteract spikes in the current consumption of the SIM up to the limits given in the conformance requirement, ensuring that the supply voltage stays in the specified range.

27.17.2.1.2.2 Conformance requirement

a) The voltage on contact C1 of the SIM/ME interface shall be 5V ± 10 % for spikes in the current consumption with a maximum charge of 40 nAs with no more than 400 ns duration and an amplitude of at most 200 mA.

b) The voltage on contact C1 of the SIM/ME interface shall be 3V ± 10 % for spikes in the current consumption with a maximum charge of 12 nAs with no more than 400 ns duration and an amplitude of at most 60 mA.

c.1) The voltage on contact C1 of the SIM/ME interface shall be 5V ± 10 % for spikes in the current consumption with a maximum charge of 40 nAs with no more than 400 ns duration and an amplitude of at most 200 mA when the interface is in 5V operation mode.

c.2) The voltage on contact C1 of the SIM/ME interface shall be 3V ± 10 % for spikes in the current consumption with a maximum charge of 12 nAs with no more than 400 ns duration and an amplitude of at most 60 mA when the interface is in 3V operation mode.

d) The voltage on contact C1 of the SIM/ME interface shall be 1,8V ± 10 % for spikes in the current consumption with a maximum charge of 12 nAs with no more than 400 ns duration and an amplitude of at most 60 mA.

e.1) The voltage on contact C1 of the SIM/ME interface shall be 3V ± 10 % for spikes in the current consumption with a maximum charge of 12 nAs with no more than 400 ns duration and an amplitude of at most 60 mA when the interface is in 3V operation mode.

e.2) The voltage on contact C1 of the SIM/ME interface shall be 1,8V ± 10 % for spikes in the current consumption with a maximum charge of 12 nAs with no more than 400 ns duration and an amplitude of at most 60 mA when the interface is in 1,8V operation mode.

Reference:

a), c.1): 3GPP TS 11.11, subclause 5.2.

b), c.2), e.1): 3GPP TS 11.12, clause 5.

d), e.2): 3GPP TS 11.18, clause 5.

27.17.2.1.2.3 Test purpose

To verify that the ME keeps the voltage on contact C1 of the SIM/ME interface within the specified range for the conditions given in the conformance requirement.

27.17.2.1.2.4 Method of test

Initial condition

The ME is connected to a SIM Simulator.

The MS is activated.

The remaining contacts of the SIM/ME interface are held in nominal test condition (see 3GPP TS 11.10 subclause 27.17.2).

Procedure

To test the requirements a) and c-1), the voltage on contact C1 of the SIM/ME interface is monitored and the following current spikes are applied:

1) continuous spikes:

current amplitude 20 mA

current offset 0 mA

Duration 100 ns

Pause 100 ns

2) continuous spikes:

current 20 mA

current offset 0 mA

Duration 400 ns

Pause 400 ns

3) continuous spikes:

current amplitude 15 mA

current offset 5 mA

(i.e. maximum amplitude = 5 mA + 15 mA = 20 mA

Duration 150 ns

Pause 300 ns

4) random spikes:

current amplitude 200 mA

current offset 0 mA

Duration 200 ns

Pause between 0,1 ms and 500 ms, randomly varied

5) random spikes:

current amplitude 100 mA

current offset 0 mA

Duration 400 ns

Pause between 0,1 ms and 500 ms, randomly varied

6) random spikes

current amplitude 195 mA

current offset 5mA

(i.e. maximum amplitude = 5 mA + 195 mA = 200 mA

Duration 200 ns

Pause between 0,1 ms and 500 ms, randomly varied

To test the requirements b), c.2), d), e.1) and e.2) the voltage on contact C1 of the SIM/ME interface is monitored and the following current spikes are applied:

1) continuous spikes:

current amplitude 12 mA

current offset 0 mA

Duration 100 ns

Pause 100 ns

2) continuous spikes:

current 12 mA

current offset 0 mA

Duration 400 ns

Pause 400 ns

3) continuous spikes:

current amplitude 9 mA

current offset 3 mA

(i.e. maximum amplitude = 3 mA + 9 mA = 12 mA

Duration 150 ns

Pause 300 ns

4) random spikes:

current amplitude 60 mA

current offset 0 mA

Duration 200 ns

Pause between 0,1 ms and 500 ms, randomly varied

5) random spikes:

current amplitude 30 mA

current offset 0 mA

Duration 400 ns

Pause between 0,1 ms and 500 ms, randomly varied

6) random spikes

current amplitude 57 mA

current offset 3 mA

(i.e. maximum amplitude = 3 mA + 57 mA = 60 mA

Duration 200 ns

Pause between 0,1 ms and 500 ms, randomly varied

NOTE: The specified spike durations are measured at 50 % of the spike amplitude.

27.17.2.1.2.5 Test requirement

The voltage on contact C1 of the SIM/ME interface shall be within the ranges specified in the conformance requirements.

27.17.2.2 Electrical tests on contact C2

C2 = Reset (RST).

27.17.2.2.1 Definition

When the mobile station is activated, the voltage on contact C2 of the SIM/ME interface shall remain in the specified range in order to ensure correct operation and to prevent any damage to the SIM.

27.17.2.2.2 Conformance requirement

a) The voltage on contact C2 (RST) of the SIM/ME interface shall be between ‑0,3V and +0,6V for a current of ‑200 A in low state and between 3,8V and Vcc + 0,3V for a current of +20 A in high state.

b) The voltage on contact C2 (RST) of the SIM/ME interface shall be between ‑0,3V and +0,7V for a current of ‑200 A in low state and between 2,15 V and Vcc + 0,3V for a current of +200 A in high state.

c.1) The voltage on contact C2 (RST) of the SIM/ME interface shall be between ‑0,3V and +0,6V for a current of ‑200 A in low state and between 3,8V and Vcc + 0,3V for a current of +20 A in high state when the interface is in 5V operation mode.

c.2) The voltage on contact C2 (RST) of the SIM/ME interface shall be between ‑0,3V and +0,7V for a current of ‑200 A in low state and between 2,15 V and Vcc + 0,3V for a current of +200 A in high state when the interface is in 3V operation mode.

d) The voltage on contact C2 (RST) of the SIM/ME interface shall be between ‑0,3V and +0,47V for a current of ‑200 A in low state and between 1,3 V and Vcc + 0,3V for a current of +200 A in high state.

e.1) The voltage on contact C2 (RST) of the SIM/ME interface shall be between ‑0,3V and +0,7V for a current of ‑200 A in low state and between 2,15 V and Vcc + 0,3V for a current of +200 A in high state when the interface is in 3V operation mode.

e.2) The voltage on contact C2 (RST) of the SIM/ME interface shall be between ‑0,3V and +0,47V for a current of ‑200 A in low state and between 1,3 V and Vcc + 0,3V for a current of +200 A in high state when the interface is in 1,8V operation mode.

Reference:

a), c.1): 3GPP TS 11.11, clause 5.

b), c.2), e.1): 3GPP TS 11.12, clause 5.

d), e.2): 3GPP TS 11.18, clause 5.

27.17.2.2.3 Test purpose

To verify that the ME keeps the voltage on contact C2 (RST) of the SIM/ME interface within the specified range, as given in the conformance requirement.

27.17.2.2.4 Method of test

27.17.2.2.4.1 Initial condition

The ME is connected to a SIM Simulator.

The MS is activated.

The remaining contacts of the SIM/ME interface are held in nominal test conditions (see 3GPP TS 11.10 subclause 27.17.2).

27.17.2.2.4.2 Procedure

The voltage on contact C2 (RST) of the SIM/ME interface is measured.

27.17.2.2.5 Test requirement

The voltage on contact C2 (RST) of the SIM/ME interface shall be within the range specified in the conformance requirement.

27.17.2.3 Electrical tests on contact C3

C3 = Clock (CLK).

27.17.2.3.1 Definition

When the mobile station is activated, the voltage, the rise/fall time of the signal, the clock cycle ratio and the frequency on contact C3 of the SIM/ME interface shall remain in the specified range in order to ensure correct operation and to prevent any damage to the SIM.

.

27.17.2.3.2 Conformance requirement

a.1) The voltage on contact C3 (CLK) of the SIM/ME interface shall be between ‑0,3V and +0,5V for a current of ‑200 A in low state and between 3,15V and Vcc +0,3V for a current of +20 A in high state.

a.2) The rise and the fall time of the clock signal shall not exceed 9 % of the clock period .

a.3) The cycle ratio of the clock signal shall be between 40 % and 60 % of the period, in steady state.

a.4) The frequency of the clock signal shall be between 1 MHz and 5 MHz.

b.1) The voltage on contact C3 (CLK) of the SIM/ME interface shall be between ‑0,3V and +0,6V for a current of ‑20 A in low state and between 1,9V and Vcc +0,3V for a current of +20 A in high state.

b.2) The rise and the fall time of the clock signal shall not exceed 50 ns.

b.3) The cycle ratio of the clock signal shall be between 40 % and 60 % of the period, in steady state.

b.4) The frequency of the clock signal shall be between 1 MHz and 4 MHz.

c.1) The voltage on contact C3 (CLK) of the SIM/ME interface shall be between ‑0,3V and +0,5V for a current of ‑200 A in low state and between 3,15V and Vcc +0,3V for a current of +20 A in high state when the interface is in 5V operation mode.

c.2) The rise and the fall time of the clock signal shall not exceed 9 % of the clock period when the interface is in 5V operation mode.

c.3) The cycle ratio of the clock signal shall be between 40 % and 60 % of the period, in steady state when the interface is in 5V operation mode.

c.4) The frequency of the clock signal shall be between 1 MHz and 5 MHz when the interface is in 5V operation mode.

c.5) The voltage on contact C3 (CLK) of the SIM/ME interface shall be between ‑0,3V and +0,6V for a current of ‑20 A in low state and between 1,9V and Vcc +0,3V for a current of +20 A in high state when the interface is in 3V operation mode.

c.6) The rise and the fall time of the clock signal shall not exceed 50 ns when the interface is in 3V operation mode.

c.7) The cycle ratio of the clock signal shall be between 40 % and 60 % of the period, in steady state when the interface is in 3V operation mode.

c.8) The frequency of the clock signal shall be between 1 MHz and 4 MHz when the interface is in 3V operation mode.

d.1) The voltage on contact C3 (CLK) of the SIM/ME interface shall be between ‑0,3V and +0,47V for a current of ‑20 A in low state and between 1,21V and Vcc +0,3V for a current of +20 A in high state.

d.2) The rise and the fall time of the clock signal shall not exceed 50 ns.

d.3) The cycle ratio of the clock signal shall be between 40 % and 60 % of the period, in steady state.

d.4) The frequency of the clock signal shall be between 1 MHz and 4 MHz.

e.1) The voltage on contact C3 (CLK) of the SIM/ME interface shall be between ‑0,3V and +0,47V for a current of ‑20 A in low state and between 1,21V and Vcc +0,3V for a current of +20 A in high state when the interface is in 1,8V operation mode.

e.2) The rise and the fall time of the clock signal shall not exceed 50 ns when the interface is in 1,8V operation mode.

e.3) The cycle ratio of the clock signal shall be between 40 % and 60 % of the period, in steady state when the interface is in 1,8V operation mode.

e.4) The frequency of the clock signal shall be between 1 MHz and 4 MHz when the interface is in 1,8V operation mode.

e.5) The voltage on contact C3 (CLK) of the SIM/ME interface shall be between ‑0,3V and +0,6V for a current of ‑20 A in low state and between 1,9V and Vcc +0,3V for a current of +20 A in high state when the interface is in 3V operation mode.

e.6) The rise and the fall time of the clock signal shall not exceed 50 ns when the interface is in 3V operation mode.

e.7) The cycle ratio of the clock signal shall be between 40 % and 60 % of the period, in steady state when the interface is in 3V operation mode.

e.8) The frequency of the clock signal shall be between 1 MHz and 4 MHz when the interface is in 3V operation mode.

Reference:

a), c.1,2,3,4) 3GPP TS 11.11, clause 5 and subclause 5.4.

b), c.5,6,7,8), e.1,2,3,4) 3GPP TS 11.12, subclause 4.2 and clause 5.

d), e.5,6,7,8) 3GPP TS 11.18, subclause 4.2 and clause 5.

27.17.2.3.3 Test purpose

To verify that the ME keeps the voltage, the rise and fall time, the cycle ratio and the frequency on contact C3 (CLK) of the SIM/ME interface within the ranges specified in the conformance requirements.

27.17.2.3.4 Method of test

27.17.2.3.4.1 Initial condition

The ME is connected to a SIM Simulator.

The MS is activated.

The remaining contacts of the SIM/ME interface are held in nominal test conditions (see 3GPP TS 11.10 subclause 27.17.2).

27.17.2.3.4.2 Procedure

The voltage, the rise/fall time, the clock cycle ratio and the frequency on contact C3 (CLK) of the SIM/ME interface are measured.

27.17.2.3.5 Test requirement

The voltage, the rise and fall time, the cycle ratio and the frequency on contact C3 (CLK) of the SIM/ME interface shall be within the ranges specified in the conformance requirements.

27.17.2.4 [Not used]

27.17.2.5 Electrical tests on contact C7

C7 = Input – output (I/O).

27.17.2.5.1 Definition

When the mobile station is activated, the ME shall keep the voltage, the current and the rise/fall time of the signal on contact C7 of the SIM/ME interface within the specified range in order to ensure correct operation and to prevent any damage to the SIM..

27.17.2.5.2 Conformance requirement

a.1) ME receiving state A (low state):

With an imposed voltage of 0V the current flowing out of the ME shall not exceed 1 mA.

a.2) ME transmitting state A (low state):

The voltage shall be between ‑0,3V and 0,4V when a current of 1 mA flowing into the ME is applied.

a.3) ME transmitting or receiving state Z (high state):

The voltage shall be between +3,8V and Vcc + 0,3V when a current of 20 A flowing out of the ME is applied.

a.4) The rise time and the fall time of the I/O signal shall not exceed 1 s.

b.1) ME receiving state A (low state):

With an imposed voltage of 0V the current flowing out of the ME shall not exceed 1 mA.

b.2) ME transmitting state A (low state):

The voltage shall be between ‑0,3V and 0,4V when a current of 1 mA flowing into the ME is applied.

b.3) ME transmitting or receiving state Z (high state):

The voltage shall be between 0,7*Vcc and Vcc + 0,3V when a current of 20 A flowing out of the ME is applied.

b.4) The rise time and the fall time of the I/O signal shall not exceed 1 s.

c.1) ME receiving state A (low state):

With an imposed voltage of 0V the current flowing out of the ME shall not exceed 1 mA when the ME is in 5V operation mode.

c.2) ME transmitting state A (low state):

The voltage shall be between ‑0,3V and 0,4V when a current of 1 mA flowing into the ME is applied when the ME is in 5V operation mode.

c.3) ME transmitting or receiving state Z (high state):

The voltage shall be between +3,8V and Vcc + 0,3V when a current of 20 A flowing out of the ME is applied when the ME is in 5V operation mode.

c.4) The rise time and the fall time of the I/O signal shall not exceed 1 s when the ME is in 5V operation mode.

c.5) ME receiving state A (low state):

With an imposed voltage of 0V the current flowing out of the ME shall not exceed 1 mA when the ME is in 3V operation mode.

c.6) ME transmitting state A (low state):

The voltage shall be between ‑0,3V and 0,4V when a current of 1 mA flowing into the ME is applied when the ME is in 3V operation mode.

c.7) ME transmitting or receiving state Z (high state):

The voltage shall be between 0,7*Vcc and Vcc + 0,3V when a current of 20 A flowing out of the ME is applied when the ME is in 3V operation mode.

c.8) The rise time and the fall time of the I/O signal shall not exceed 1 s when the ME is in 3V operation mode.

d.1) ME receiving state A (low state):

With an imposed voltage of 0V the current flowing out of the ME shall not exceed 1 mA.

d.2) ME transmitting state A (low state):

The voltage shall be between ‑0,3V and 0,3V when a current of 1 mA flowing into the ME is applied.

d.3) ME transmitting or receiving state Z (high state):

The voltage shall be between 0,7*Vcc and Vcc + 0,3V when a current of 20 A flowing out of the ME is applied.

d.4) The rise time and the fall time of the I/O signal shall not exceed 1 s.

e.1) ME receiving state A (low state):

With an imposed voltage of 0V the current flowing out of the ME shall not exceed 1 mA when the ME is in 3V operation mode.

e.2) ME transmitting state A (low state):

The voltage shall be between ‑0,3V and 0,4V when a current of 1 mA flowing into the ME is applied when the ME is in 3V operation mode.

e.3) ME transmitting or receiving state Z (high state):

The voltage shall be between 0,7*Vcc and Vcc + 0,3V when a current of 20 A flowing out of the ME is applied when the ME is in 3V operation mode.

e.4) The rise time and the fall time of the I/O signal shall not exceed 1 s when the ME is in 3V operation mode.

e.5) ME receiving state A (low state):

With an imposed voltage of 0V the current flowing out of the ME shall not exceed 1 mA when the ME is in 1,8V operation mode.

e.6) ME transmitting state A (low state):

The voltage shall be between ‑0,3V and 0,3V when a current of 1 mA flowing into the ME is applied when the ME is in 1,8V operation mode.

e.7) ME transmitting or receiving state Z (high state):

The voltage shall be between 0,7*Vcc and Vcc + 0,3V when a current of 20 A flowing out of the ME is applied when the ME is in 1,8V operation mode.

e.8) The rise time and the fall time of the I/O signal shall not exceed 1 s when the ME is in 3V operation mode.

Reference:

a), c.1,2,3,4) 3GPP TS 11.11, clause 5.

b), c-5,6,7,8), e.1,2,3,4) 3GPP TS 11.12, clause 5.

d), e-5,6,7,8) 3GPP TS 11.18, clause 5.

27.17.2.5.3 Test purpose

To verify that the ME keeps the voltage, the current and the rise and fall times of the signal on contact C7 (I/O) of the SIM/ME interface within the ranges specified in the conformance requirements.

27.17.2.5.4 Method of test

27.17.2.5.4.1 Initial condition

The ME is connected to a SIM Simulator.

The MS is activated.

The remaining contacts of the SIM/ME interface are held in nominal test conditions (see 3GPP TS 11.10 subclause 27.17.2).

27.17.2.5.4.2 Procedure

The voltage, the current and the rise/fall time on contact C7 (I/O) of the SIM/ME interface are measured.

27.17.2.5.5 Test requirement

The voltage, the current and the rise and fall times of the signal on contact C7 (I/O) of the SIM/ME interface shall be within the ranges specified in the conformance requirements.